Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
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