The electrolytic capacitor relies on charge to maintain its aluminium oxide dielectric. Without charge the dielectric decomposes over time.
电解电容依赖于充电以维持其氧化铝的介电特性。如果长时间不充电，其电介质会分解。
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
Optical constants and dielectric constants of normal cesium oxide thin films are related to wavelength of incident light and cesium impurity contained.
正常氧化铯薄膜的光学常数和介电常数随铯杂质含量和入射光波长有关。
Other typical low current measurements on wafer level semiconductors are related to the dielectric, either the oxide or compound quality.
另一些对于晶圆片级半导体的弱电流测量则通常与介电材料(氧化物或化合物)的质量有关。
The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
将半导体氧化层与金属氧化物层转化成一第一介电层。
The time dependent dielectric breakdown of tunneling oxide used for EEPROM's is investigated.
阐述了应用于EEPROM中的超薄隧道氧化层随时间的击穿特性。
In one embodiment, the dielectric material is silicon oxide.
在一实施例中，该电介质为氧化硅。
In one embodiment, the dielectric material is silicon oxide.
在一实施例中，该电介质为氧化硅。
应用推荐