In tests, they modeled a DNA version of an XOR logic gate that generates an output when one of two inputs is present, but not when both or neither is present.
在试验中，他们构建了一个DNA版本的“异或”逻辑门，当两个输入端中有一个有输入时，产生输出；但当两个输入端都有或都没有输入时，就不会产生输出。
A pulse to gate the output of a core memory sense amplifier into a trigger in a register.
将磁心存储器读出放大器的输出选通到寄存器的触发器中的一种脉冲。
Fan-out refers to the number of standard loads (inputs) that the output of a gate can be connected to without impairing its normal operation.
输出端数量就是指在不削弱其功能的前提下，输出栅门所能连接的标准荷载的数量。
While the main gate is open, the conditioned input signal pulses are passed through to the counting register, where they are tallied and then scaled for output by the display circuitry.
当主控门打开时，经过转换的输入信号脉冲通过它进入计数寄存器，并在此统计，然后通过显示电路输出。
M. adjusted, by the use of high speed SCR gate, a new convening power source with output of 100a for plasma are cutting is developed.
调节为基础，利用快速可控硅做开关元件，研制的一台新型等离子弧切割电源——输出直流100a逆变切割电源。
So if these factors are controlled properly, the output performance of the logic AND gate can be effectively improved.
合理控制这些因素，可以有效地提高该逻辑与门的输出特性。
Since I had an extra 4069 gate, I used it to obtain an inverted output.
因为我有一个额外的4069门，我用它来取得一倒输出。
Heat dissipation in MOS gate is in direct Proportion to its output switching activity.
MOS逻辑门电路的功率损耗与其门电路的输出翻转成正比。
Experimental results reveal that the peak value of the output voltage of POSFET increases with extended gate area and decreases as the channel length increases.
实验结果显示，POSFET传感器的输出峰值随扩展栅面积的增加而增大，随沟道长度的减小而增大。
The output characteristics also make the AD590 easy to multiplex: the current can be switched by a CMOS multiplexer or the supply voltage can be switched by a logic gate output.
这种输出特性还便于AD590实现多路复用：输出电流可以通过一个CMOS多路复用器切换，或者电源电压可以通过一个逻辑门输出切换。
Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.
针对阳极控制电源的输出脉冲宽度变化大的特点，采用串联固态开关控制阳极电压。
"The Gate" is such a circuit: it provides among the various input signals to meet a certain logic relations, the only output.
“门”是这样的一种电路：它规定各个输入信号之间满足某种逻辑关系时，才有信号输出。
Constant components and output opened ports in the result of high level synthesis lead to explicit redundancy in gate level technology mapping.
高级综合结果中常量元件和输出悬空端口导致门级工艺映射结果中存在显式冗余。
Much the same as the procedure for making a NOR gate behave as a NAND, we must invert all inputs and the output to make a NAND gate function as a NOR.
大致相同的程序让或非门表现为一个与非门，我们必须颠倒所有输和输出，使一个与非门的作为或非门。
An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。
The circuit is based on a simple XNOR logic gate and delay lines to sample the output of the XNOR gate, so very little area is introduced.
该电路建立在一个简单的异或非逻辑门和延迟线的基础上，通过抽样调查异或非门的输出来检测电路的错误点，引入的多余面积很少。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The electronics driver inherent in the design can also be used to further gate the function of the light output.
设计里固有的电子驱动也可以用来进一步控制光输出的功能。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
A fault output indicates gate status.
一个故障输出指示栅极状态。
In terms of transient characteristics, the gate-lag phenomenon and the frequency dispersion of transconductance (gm) and output conductance will be found.
在瞬态特性上，引起栅延迟以及跨导和输出电导的频散。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
To convert a gate circuit to a Boolean expression, label each gate output with a Boolean sub-expression corresponding to the gates' input signals, until a final expression is reached at the last gate.
要转换选通电路成一个布尔表示式，标记每个门的产品以对应于门的输入的一个布尔次级表示信号，直到最后一个表示信号到达最后门。
The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
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