Paint film, matte film, optical mask, and other products.
彩绘膜、哑光膜、光面膜等多系列产品。
The invention relates to an optical mask automatic assembly system and an optical mask automatic assembly method.
本发明涉及一种光学膜片自动组装系统和光学膜片自动组装方法。
Compared with the technology for binary optical mask, the technology has the following strong points: process simplification, short period of fabrication and easy operation.
与二元光学元件掩模的制作工艺相比，该技术具有工艺简单、制作周期短且易于操作的优点。
The method comprises the following steps: recording a required pattern onto a photographic plate through laser holography and manufacturing an optical mask plate with the holographic pattern;
该方法包括：将需要的图纹通过激光全息术记录到感光板上，制得具有全息图纹 的光学掩模板；
Gray scale mask method is a novel way of fabricating binary optical elements.
灰度掩模法是一种新的二元光学器件制做方法。
A variable transmittance is provided to different position on grayscale mask plane and the required diffractive optical elements can be obtained after one-time exposure.
通过灰度掩模平面不同位置处提供可变的透过率，经一次光刻后得到所需的衍射光学元件。
By use of optical holographic theory, achromatic optical system on recording holographic BSG mask is designed. Its aberration is analyzed by using ZEMAX.
利用光全息学的基本原理，设计了记录全息取样光栅掩模的消像差光学系统，并使用光学设计软件ZEMAX分析了它的像差；
It utilizes optical phase shifting mask to improve resolution limit for an existing wafer stepper.
它应用了光学相移掩模方法，大大提高了现有光学光刻设备的分辨率水平。
The precise size filter is deposited with the mask method successfully, the spectrum characteristic is tested through utilizing the optical fibre spectrometer.
通过采用光学掩膜的方法成功制备了符合设计尺寸要求的可见光滤光片，并利用光纤光谱仪测试了滤光片的光谱特性。
The results show that it is suitable to write azopolymer long-period optical fiber gratings using the polarization direct writing method and amplitude mask method.
结果表明：目前比较适合用于偶氮苯聚合物长周期光纤光栅刻写的方法有偏振直写法和振幅掩模法两种。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
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