So I would call it a one-dimensional crystal.
所以我们称之为一维晶体。
It's going to be a one-dimensional crystal.
它将是一维的晶体。
You can consider this line a one-dimensional crystal because it is ordered.
你可以考虑这一列为一维的晶体，因为它是有序的。
The results show that the factors are the refractive index thick ness layer number of one-dimensional dual photonic crystal polarization and incident Angle of incident ray.
结果表明：组成一维二元光子晶体的折射率、厚度、层数、入射角、光源的偏振态等都对透射特性有影响。
The thickness of transition layer of crystal polymer is generally calculated by one dimensional electron density correlation function.
一般用一维电子密度相关函数来计算结晶聚合物的过渡层厚度。
The filtering properties of doped one-dimensional photonic crystal containing negative refractive index material are studied by using transfer matrix method.
利用转移矩阵法，研究了含负折射率材料的一维光子晶体掺杂后的滤波性质。
The transfer characteristics of one-dimensional photonic crystal with linear and nonlinear defect layers are analyzed and simulated with a transfer matrix.
利用转移矩阵法分析具有线性和非线性缺陷层的一维光子晶体的传递函数并进行了数值模拟。
The transfer matrix method is used to study optical comb filter properties of one-dimensional multilayer photonic crystal.
把传输矩阵方法推广应用于研究一维多元光子晶体实现光学梳状滤波。
The photonic band gap (PBG) property of a one-dimensional photonic crystal with a defect layer under pressure is studied, accordingly an improved model of pressure sensor is described.
通过研究带缺陷的一维光子晶体受压力后光带隙性能的变化，提出了改进型光子晶体压力传感器的理论模型。
In order to implement the multi-channel filtering of the photonic crystal, the numerical calculation and theoretical analysis for the one-dimensional photonic crystal were performed.
为了实现光子晶体的多通道滤波，对设计出的一维掺杂光子晶体进行了数值计算和理论分析。
The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.
运用光在分层介质中传播的特征矩阵方法，通过数值计算，研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。
The results show that the factors are the refractive index, thick ness, layer number of one-dimensional dual photonic crystal, polarization and incident Angle of incident ray.
结果表明：组成一维二元光子晶体的折射率、厚度、层数、入射角、光源的偏振态等都对透射特性有影响。
The transmission through one-dimensional photonic crystal with negative refractive index defects was studied by using transfer matrix method.
利用传输矩阵方法研究了含负折射率缺陷的一维光子晶体的透射谱。
A moving solution for soliton excitation of a one-dimensional molecular-crystal model with the dispersion term is found.
本文得到考虑了色散项后的一维分子晶体模型的孤子激发的运动解。
In chapter two we analytically study the nonlinear lattice effects for the ground state of electron-phonon interaction one-dimensional molecular crystal system.
第二章用解析方法研究一维分子晶体电子-声子耦合系统基态中晶格非线性效应。
It is also a new thinking to design an full-dimensional high-reflective coating by means of one dimensional photonic crystal technology.
而利用较新的一维光子晶体技术设计全角度的红外反射膜则是一条新的思路。
In chapter 2, the theoretical research methods of one dimensional photonic crystal containing negative refraction material are introduced.
在第二章中，主要介绍了含负折射率材料的一维光子晶体的理论研究方法。
Using the transfer matrix, this paper also derived the dispersion relation of the one-dimensional photonic crystal composed of alternative left-handed and right-handed materials.
利用这个转移矩阵，推导出了由左右手材料交替构成的一维光子晶体的色散关系。
The switch bases on one-dimensional photonic crystal doped by electro-optical material.
设计了新型的光开关器件，该器件建立在掺杂电光材料的一维光子晶体上。
The transmission through one-dimensional photonic crystal coupled-resonator containing defect layers with negative refractive index is studied by using transfer matrix method.
利用转移矩阵方法研究了含双负缺陷的一维光子晶体耦合腔的透射谱。
In this paper, the effect of electron-phonon coupling on the bandwidth of impurity absorption has been considered with a one-dimensional model of crystal lattices.
在这篇文章中，我们用一维晶格模型讨论了杂质中心中电声子耦合强度的问题。
Both structures are one-dimensional photonic crystal with incomplete photonic band gap.
这两种结构属于紫外线波段一维不完全带隙光子晶体。
To overcome this constraint, the researchers first developed one-dimensional, single-crystal silicon electronics, which they reported in 2005.
为了克服这个限制，研究人员们首先开发了一维单晶硅电子产品。这项研究在2005年被报道。
To overcome this constraint, the researchers first developed one-dimensional, single-crystal silicon electronics, which they reported in 2005.
为了克服这个限制，研究人员们首先开发了一维单晶硅电子产品。这项研究在2005年被报道。
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