To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
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