The photo-bidirectional negative resistance transistor (PBNRT) is a novel "s" type photoelectric negative resistance device.
光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件。
Based on this, a Two-terminal Bidirectional negative resistance Device (TBNRD) is fabricated and the theory of the negative resistance is studied.
在此实验基础上研制得到一种双向两端S型负阻器件(TBNRD器件).本文还对该器件产生负阻的原因进行了理论分析。
The main feature of this device is high speed charge transport and broad regions of negative differential resistance.
其主要特点是，高速的电荷传输和宽的负微分电阻。
The main feature of this device is high speed charge transport and broad regions of negative differential resistance.
其主要特点是，高速的电荷传输和宽的负微分电阻。
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