This work focus on the evolution ways to study the Nanocrystal floating gate non-volatile memory devices.
本文从改进型方案入手，研究了纳米晶浮栅结构的非易失性存储技术。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
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