At the junction where the two layers meet, electrons pair up with holes, establishing an electric field that prevents electrons from moving from the n-type material to the p-type.
两层接触处电子与“孔”便成双配对地形成了电场，阻止电子从n层移到的p层。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
But when these two semiconductors are connected, they form a P-N junction.
但这两种半导体连接起来的时候，它们之间就形成一个P - N结。
The wavelength of light is the color of light, which is determined by the material that forms the P-N junction.
而光的波长也就是光的颜色，是由形成P-N结的材料决定的。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文讨论了低温下P - N结的正向电压降v _ F随温度t变化的特性。
The solar cells include a substrate having a light collecting surface thereon and a P-N rectifying junction within the substrate.
太阳能电池包括基板，该基板具有在其上的光收集表面以及在该基板内的P-N整流结。
An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.
一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
Through analyze, we consider the P-N junction temperature, the concentration of phosphor, the thickness of the coating as the main reason for these electric-light-color parameters changes.
通过分析，发现P - N结的温度、荧光粉浓度与其涂覆的厚度是影响这些光色电参数变化的主要原因。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
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