These are why you need higher voltage MosFETs.
这是为什么您需要较高的电压MOSFET的。
For this reason, you should not use digital MOSFETs.
出于这个原因，不应该使用数字MOSFET。
The dielectric layer so formed may be used in the fabrication of MOSFETs (145).
这样形成的介质层可 以用于制造MOSFET（145）。
A solid state high frequency induction heating power supply using power MOSFETs is studied.
本文研究了使用功率MOSFET的固态高频感应加热电源。
The noise mainly comes from the thermal noise of resistors and the flicker noise of MOSFETs.
接收机中的噪声主要是电路中电阻的热噪声和MOS器件的闪烁噪声。
First, the clamping voltage during the MOSFETs turning off is 800V, what is higher then of 600V.
第一，在场效应晶体管关断期间钳位电压是800伏特，高于600伏特。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
Also see the Modifications section earlier in this article for other MOSFETs you can use for Q2 through Q5.
也看到修改的第本文前面的其他的MOSFET您可以使用第二季度，通过问题5。
For high power system, every switch of three-phase inverter is actually made up of four MOSFETs in Parallel.
考虑到系统功率较大，三相桥式功率变换器的每个开关器件均采用四个MOS管并联的结构。
DSOI, bulk si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
通过局域注氧工艺，在同一管芯上制作了DSOI、体硅和SOI三种结构的器件。
Various power devices are compared with each other. Power MOSFETs are employed as the switches of the power supply.
分析对比了各种常用电力电子器件选择了功率MOSFET作为逆变器开关元件。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The operating mode of the 3-phase 6-state square-wave motor with wye-connected phase windings and two mosfets is analyzed.
研究和分析了两相导通三相六状态星形方波无刷直流电机的运行模式。
A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
利用MOS管、半桥驱动芯片LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。
Then people begin to study how to maintain performances of long channel devices when the characteristic dimension of MOSFETs reduced.
于是人们开始研究如何在MOS器件尺寸缩小的同时，仍然继续保持长沟道器件的良好特性。
The MOSFET is driven by IR2110, it is simple and convenient to use. Using this method can achieve the simply control of series MOSFETs.
以MOSFET驱动芯片IR2110作为控制芯片对开关器件进行驱动，控制简单方便，实现了通过控制单管而驱动多管，解决了多开关控制同步困难的问题。
This thesis pays more attention to the HF MOSFET drive circuit and characteristics of balancing parallel MOSFETs' currents in dynamic mode.
本文主要研究高频功率MOSFET的驱动电路和在动态开关模式下的并联均流特性。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
The drive circuit of power MOSFETs is simplified and the stabilization of the controller is enhanced attributed to the drive capability of this chip.
由于芯片自带功率MOS管驱动能力，简化驱动电路设计的同时提高了控制器的可靠性。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
The influence of the parasitic resistance on the MOSFETs performance cannot be neglected, because parasitic resistance can't be reduced by the scaling down of MOSFETs.
MOS器件的寄生电阻不能随着器件尺寸的缩小而缩小，因而寄生电阻对于小尺寸mos器件性能的影响不容忽视。
In this paper, we present a circuit simulation algorithm based on the partial differential equation (PDE) model of MOSFETs, together with a fast algorithm for solving the PDE.
研究了基于MOSFET偏微分方程(PDE)模型的电路仿真算法，并提出一种求解pde的快速算法。
To prevent the control disturbance in the process of MOSFETs on-offs, Optoisolator circuit has been used to realize the isolation of the driving circuit and the control circuit.
为防止功率管开关过程中对控制电路造成干扰，采用光电隔离的方法实现驱动电路和控制电路的隔离。
The experimental and analytical results demonstrate that wide bandwidth, high voltage output and long-time stability can be achieved with power MOSFETs and a closed-loop scheme.
实验与分析表明，高压直流放大器采用功率场效应管和电压闭环控制后，可拓展放大器通频带，提高放大器输出能力和长时间稳定性。
The LTC4365 consumes only 125ua in normal operation, and has a shutdown pin for enabling and disabling the external MOSFETs, and for providing a low current shutdown state of 10ua.
LTC 4365在正常工作时仅消耗125ua电流，并有一个停机引脚用来启动和禁止外部MOSFET，以及用来提供一种10ua的小电流停机状态。
This paper introduces the experimental results of two snubber circuits for the full bridge switch circuit constituted by MOSFETs in case of the inductive load and large current operation.
介绍由MOSFET管构成的全桥开关电路在感性负载下大电流工作时两种吸收回路的实验研究结果。
The effective potential correction was used in 3d Monte Carlo simulation of nanoscale MOSFETs to deal with quantum mechanical effects. A parallel algorithm based on PC clusters was proposed.
为了处理纳米mos场效应管的量子效应，在蒙特卡罗模拟中引入有效势量子修正，并提出了基于PC机群的三维并行模拟算法。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
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