A rail-to-rail input range transconductor implemented by MOS transistors linear region characters is presented.
介绍了一种利用MOS管线性区特性实现满摆幅输入的跨导器。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
Capacitors and their bypass MOS transistors are used for the storage and erasure of signals, instead of using flip-flops.
以电容及其旁路MOS管代替触发器实现信号的暂存和抹除。
Testing MOS transistors including high voltage LDMOS and low voltage MOS after the process experiment, then analyze the results of test.
测试了工艺流片实验后MOS器件的性能，并对测试结果进行分析。
The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全cmos器件的电流基准。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.
本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
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