The neuron MOS transistor is a recently invented device with high functionality.
神经mos晶体管是最近几年才发明出来的一种高功能度的器件。
There are provided a vertical MOS transistor and a method of manufacturing the same.
提供一种垂直MOS晶体管及其制造方法。
The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.
最后通过对器件运算精度的分析，得出其运算精度主要受MOS晶体管寄生电容等因素的影响。
The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
By signal flow graph, a new universal active current mode second-order filter was designed basis on establishing MOS transistor small-signal model. The filter is of three-input and one-output.
在建立了MOS场效应管小信号模型的基础上，采用信号流图的方法设计了一个三输入一输出的二阶通用有源电流模式滤波器。
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
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