The principle of MOS capacitance measurement based on the method of high frequency detection is presented.
MOS结构高频C-V（电容-电压）特性测量是检测MOS器件制作工艺的重要手段。
The anomalous curves of MOS structures in quasi-static capacitance-, oltagc measurements are reported in this paper, and reasons for the generation of these curves are discussed.
本文报导了MOS结构在准静态测试中的异常电容-电压曲线。讨论了它们产生的原因。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
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