In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
应用推荐