• Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.

    本文提出N/P外延光电压光谱响应确定N/P硅外延片中少子扩散长度方法

    youdao

  • Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.

    本文提出N/P外延光电压光谱响应确定N/P硅外延片中少子扩散长度方法

    youdao

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