A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.
结果表明，当注入水平较高时，少子扩散长度的测量值变长。
The enhancement of the minority results in the improvement of luminescent efficiency with the reduction of majority injection resulting in the falling of current level.
计算结果表明在单异质结电致发光器件中，可降低器件的电流水平，提高器件的发光效率。
The enhancement of the minority results in the improvement of luminescent efficiency with the reduction of majority injection resulting in the falling of current level.
计算结果表明在单异质结电致发光器件中，可降低器件的电流水平，提高器件的发光效率。
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