The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
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