The mobility value used is that of the minority carrier.
所采用的迁移率值都是少子迁移率。
Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。
In this paper showed a measurement method of minority carrier lifetime.
本文提出了一种测量少数载流子寿命的方法。
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.
结果表明，当注入水平较高时，少子扩散长度的测量值变长。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
Spring and Autumn period, Zhouzhuang in the territory for the king of the manor shake minority carrier, said the city shake.
春秋战国时期，周庄境内为吴王少子摇的封地，称摇城。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
In this paper, the condition under which the surface excess minority carrier density may be treated as a constant is also analysed.
在文中，我们也分析了可以把表面非平衡少子浓度作常数处理的条件。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented.
本文建议子一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.
由于背抛光面对受光面入射光的反射，使得少子产生率和受光面表面光电压都高于单面抛光片。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
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