In order to correct the measuring results of moisture from microwave resonator, the IA-BP optimization algorithm based evolutionary neural network model is presented.
为了对微波谐振腔含水率测量结果进行校正，提出一种基于IA - BP优化算法的进化神经网络模型。
A microwave resonator probe method for diagnosing local plasma electron density is described, and the measurement principle, design method and experiment results are included.
本文介绍了一种可以测量局部等离子体电子密度的微波共振探针法，并给出了它的测量原理、设计方法和实验结果。
A practical method of measuring microwave resonator unloaded Q-factor is presented, which could eliminate phase shift of feed line when Q-factor is estimated by critical-points method.
提出了一种实用的测量微波谐振器无载品质因素的方法，在临界点法的基础上，消除了馈线引入的相移。
A novel laser trimming method is developed for microwave ceramic dielectric resonator.
提出一种采用激光微调微波陶瓷介质谐振器的方法。
The structure and theory of Stepped Impedance Resonator (SIR) is proposed in this paper. A SIR band - pass filter is simulated and optimized by microwave CAD software.
介绍了阶跃阻抗谐振器(SIR)的结构和原理，在此基础上用微波cad工具仿真优化了SIR微带发卡带通滤波器。
In order to solve these defects, we put forward microwave chemistry reactor made of groove waveguide resonator, and we do a lot of studies.
针对这种缺陷，本论文提出了槽波导谐振腔结构的微波化学反应器，并对槽波导谐振腔微波化学反应器进行了详细分析和优化。
Two kinds of microwave surface resistance Rs measurements of high Tc superconductive thin films are introduced in this paper, two-resonator method and the sapphire resonator method.
本文介绍了两种测试高温超导薄膜微波表面电阻的方法：双谐振器法和蓝宝石介质谐振器法。
A method for measuring the dielectric constant and microwave loss of microwave ceramic with cutoff waveguide dielectric resonator is presented.
本文提出了用截止波导介质谐振腔测量微波材料相对介电常数和微波损耗的方法。
A microwave bandpass filter on the double-sided HTS YBCO film was designed and fabricated and tested using a new coupling double-resonator.
设计、制作并测试了一种采用新颖耦合双谐振器结构的高温超导微波带通滤波器。
A practical method for designing microwave dielectric resonator is proposed.
本文提出一种设计微波介质谐振器的实用方法。
A simplified model for microwave plasma interaction in cylindrical cavity resonator is presented.
提出了一个谐振腔内微波与等离子体相互作用的简化模型。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
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