A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed.
本发明提供能够在处理基体上形成均匀的薄膜的微波等离子体处理装置和气体供给构件。
A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed.
本发明提供能够在处理基体上形成均匀的薄膜的微波等离子体处理装置和气体供给构件。
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