To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect.
该缺陷的俘获势垒值的大的分布解释为缺陷周围原子重组的微观波动。
The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect.
该缺陷的俘获势垒值的大的分布解释为缺陷周围原子重组的微观波动。
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