A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
A semiconductor device and a method for fabricating the same are disclosed.
本发明披露了一种半导体器件及其制造方法。
A semiconductor device and a method for fabricating the same are disclosed.
本发明披露了一种半导体器件及其制造方法。
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