Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
Hla said (metal wire) is probably produced in the semiconductor or insulator and thus further evidence of the electronic conductivity along the wires without resistance.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
Hla said (metal wire) is probably produced in the semiconductor or insulator, and thus further evidence of the electronic conductivity along the wires without resistance.
Hla说(金属线)是可能在半导体或绝缘体上制作的，从而进一步证明电子是沿着电线无电阻导电。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
它由两层半导体晶硅材料合在一起夹在金属接触器之间。
The resistance of the metal probe to semiconductor contact can be quite high.
金属探头与半导体接触时的电阻可能相当高。
Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.
金属中的电子必须克服这个势垒层才能进入半导体。
In the Ohmic contacts of LED electrodes, carriers have different transmission mechanisms be - tween metal electrode and semiconductor.
在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。
This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth.
用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
The application of GDMS was reviewed in the aspects of the bulk metal, semiconductor, nonconductor, solution, gas and depth analysis.
对辉光放电质谱在块状金属、半导体、非导体、溶液、气体和深度分析方面的应用进行了综述。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
The main attention has been paid on amorphous rare earth- transition metal alloy films for magneto-optical storage and amorphous semiconductor films for phase change optical storage.
我们主要注意磁光型存储的非晶态稀土-过渡金属合金薄膜和相变型光存储的非晶态半导体薄膜两个方面。
Nanometer-size monolayer and multilayer pits on highly oriented pyrolytic graphite (HOPG) can be used as templates to prepare metal and semiconductor nanostructures.
高取向热解石墨（HOPG）单层及多层纳米孔可作为结构模板合成金属或半导体纳米结构。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
Semiconductor devices; metal cases with ceramic insulation, requirements and tests.
半导体器件。要求和检验。陶瓷绝缘的金属外壳。
The paper summarized the development technologies by semiconductor nanometer material and metal nanometer material.
主要就半导体纳米材料、金属纳米材料显现潜手印技术进展作了综述与展望。
A method of manufacturing a metal oxide semiconductor (500).
一种制造金属氧化物半导体的方法(500)。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.
利用金属有机气相淀积方法生长了一种新型吸收体：高反射率半导体可饱和吸收镜。
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces.
一种用于半导体发光器件的安装基板包括具有第一和第二相对金属表面的固体金属块。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
This paper introduces a backscattering position Detector with semiconductor laser. This instrument can be widely applied in steel and metal industries.
一种可见光半导体激光后向接收定位，测位仪，达到了先进的技术性能，在钢铁、冶金等行业具有较好的应用前景。
An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided.
给金属层和半导体层提供电连接，还可以提供磁场施加器。
High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc.
高纯度金属镓是生产化合物半导体材料的基础材料，同时它还可以用于生产超导材料、合金材料、永磁材料等。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低 成本。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低 成本。
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