The control circuitry senses data within the memory array at a beginning of a predetermined memory cycle.
控制电路在预定的存储器周期的开始时刻读出存储器阵列中的数据。
From the perspective of the memory cycle, this review can be used to learn the new words and idioms, corrected pronunciation, etc. are deeply imprinted in your mind.
从记忆周期的角度来说,这次的复习可以把之前所学的新单词与习语、所纠正过的发音等等都深深地印在你的脑子里。
Most shape memory alloys can only "cycle" (or change form) a limited number of times before the material gives out.
大部分形状记忆合金只能“循环”(或称改变形态)有限次数,之后材料就会疲劳了。
Transactions are not much different than memory and we see the general trend in languages to removing the responsibility of memory management from developers due to life cycle issues.
事务管理和内存管理比起来没有多大的不同,而且我们看到由于生命周期问题,语言的总体趋势是不再让开发人员负责内存管理。
We approximate the free memory after a garbage collection cycle by using algorithms that analyze the variance of free memory statistics.
通过使用分析可用内存统计信息变化的算法,我们可粗略计算垃圾收集周期之后的可用内存。
If the free memory after a GC cycle is consistently decreasing, then there is a high chance of a memory leak.
如果垃圾收集周期之后的可用内存持续降低,那么存在内存泄漏的可能性较高。
Accesses to local store memory can be predicted down to the clock cycle.
对本地存储内存的访问的预测可以精确到时钟周期级别上。
Round-tripping is the term used to describe a complete cycle, from storage medium into memory and back.
往返用于描述从存储媒介到内存然后回到存储媒介的完整循环。
Our memory leak detection mechanism will generally automate this process of looking for consistently downward trends in free memory after a GC cycle.
我们的内存泄漏检测机制通常会自动执行以下过程:即查找垃圾收集周期之后可用内存不断下降的趋势。
The chart in Figure 1 is an example of the charted free memory after a GC cycle in an application with a memory leak (the chart was using an internal IBM tool).
图1中以图表形式说明了存在内存泄漏的应用程序在垃圾收集周期之后的可用内存(该图表使用内部IBM工具)。
Verbose GC gives free memory statistics directly after a GC cycle, PMI data does not.
详细的垃圾收集在垃圾收集周期之后直接提供了可用内存统计信息,而 PMI数据不能提供。
Kindt and colleagues devised a test to see if the cycle of fear could be eased by interrupting the brain's ability to recreate a memory of a traumatic event.
Kindt和他的同事们策划了一个测试来观察恐惧的循环是否能通过打破大脑重塑悲伤事件的记忆得到缓解。
A portion of the buffer cycle in which the logic or arithmetic unit must cease operation or neither will be able to communicate with the memory unit.
缓冲存储器周期的一部分,在这期间,逻辑与算术运算器必须中止操作或不能与存储器传输信息。
In essence, feedback completes a learning cycle in which the feedback can be used to continually modify what is stored in memory and used to guide performance.
实质上,反馈完成了一个将反馈用于不断地修改记忆中的存储信息和指导表现的学习循环。
When I fall into the life cycle, the only constant memory is you.
当涐的生命陷入轮回里,唯一不变的记忆就是沵。
Li battery have the good features of small size, high power density, no memory effect, long cycle life, high voltage and low self-discharge.
锂电池具有体积小、能量密度高、无记忆效应、循环寿命高、高电压电池和自放电率低等优点。
But it causes the problem of memory access wait cycle.
但随之带来了访问内存时出现等待周期的问题。
The benefits of improved memory should motivate the cycle and improve you ability to succeed.
增强记忆的好处就是可以刺激进入良性循环,并最终成功的提高你的能力。
Comparing to traditional simulation oscillograph, digital memory oscillograph has the superiority that is able to display non-cycle waveforms, memory waveforms and be easy to carry about.
与传统的模拟示波器相比,数字存储示波器具有能够显示非周期波形、存储波形、携带方便等优势,其应用日益广泛。
In a semiconductor memory device operative to discharge residual charge in a read bit line in a read cycle, the bit line is in the reset state at all times except during read operation.
在用于对读取周期中读取位线上的剩余电荷放电的半导体存储器装置中,位线在除读取操作期间以外的全部时间均处于复位状态。
Along with the many canned cycle options, CNC builders introduced displays for visual editing of part programs in memory.
由于拥有众多封闭循环选择,数字计算机控制系统营造商在部分程序存储器中引入视觉编辑显示。
Another unique architectural feature is the memory system which allows an instruction fetch and at the same time a data access by each individual core at every single clock cycle.
另一个独特的构架特性是内存系统,它允许一个取指,并在同一时间,每一个核可以读取数据在每一个单独的时钟周期内。
Result The locomotor activity rhythm was consistent with the light-dark cycle. The period of light-dark cycle shorter than 24 h such as 10 h could effect on the ability of learning and memory in mice.
结果小鼠活动性周期与光暗循环周期一致,短周期光暗循环能够提高小鼠的学习记忆能力。
Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design.
该编程阈值之客制化一般可在编程该存储单元之任一周期(215,640)获得,以增加电路设计之弹性。
Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design.
该编程阈值之客制化一般可在编程该存储单元之任一周期(215,640)获得,以增加电路设计之弹性。
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