The invention discloses a memory cell array arranged multiple in rows and lines.

本发明公开了存储器单元阵列，以多行与多列排列。

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NROM memory cell, memory array, related devices and methods.

NROM存储器元件，存储器阵列，相关装置和方法。

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The invention is directed to a resistive memory cell on a substrate and a resistive memory array.

本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。

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Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

实施例包括个别存储单元、这种存储单元的阵列、操作所述存储单元或所述存储单元阵列的方法、以及其制造方法。

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Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

实施例包括个别存储单元、这种存储单元的阵列、操作所述存储单元或所述存储单元阵列的方法、以及其制造方法。

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