This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
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