The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结 晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结 晶硅层。
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