The present invention provides an organic EL device utilizing phosphorescence which can be driven at a low voltage, which realizes high luminance and high efficiency, and which has a long lifetime.
本发明提供了可以在低电压下驱动、实现高亮度和高效率并具有长 寿命的利用磷光的有机EL元件。
CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
The fundamental principles of the bulk-driven MOSFET, along with the frequency and noise characteristics, are discussed. The analysis and simulation of its low voltage characteristics are also made.
讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真。
A CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
Based on the PMOS bulk-driven technique, an ultra-low voltage operational amplifier is proposed.
基于PMOS衬底驱动技术，设计实现了超低压运算放大器。
Based on the PMOS bulk-driven technique, an ultra-low voltage operational amplifier is proposed.
基于PMOS衬底驱动技术，设计实现了超低压运算放大器。
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