Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
采用LDD结构：3。在允许的范围内，适当增加器件的沟道长度。
The short channel effects , the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
LDD和SOI结构； 移相掩模光刻技术和多层金属布线工艺。
The short channel effects , the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
LDD和SOI结构； 移相掩模光刻技术和多层金属布线工艺。
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