The incident Angle dependences of the cross sections for single event upset and single event latchup are presented.
获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系。
Latchup, matching and parasitic are considered to make sure the connection lines shortest and the cross points least, finally the chip area is estimated.
在放置器件时考虑可能出现的拴锁、匹配和寄生，使其之间的连线最短、交叉最少，并对芯片面积进行了估算。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
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