At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.
同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和NMOS管的周围增加了保护环。
At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.
同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和NMOS管的周围增加了保护环。
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