In this dissertation, we will investigate the application of several high-k dielectric and metal gate process technologies.
在本论文中，吾人将探讨数种高介电系数介电层与金属闸极的研究与应用。
The synthesis, structure, properties and process interaction of low k dielectrics are reviewed. Characterization techniques for low k dielectric films are summarized.
综述了低介电常数介质薄膜的制备方法、结构与性能表征、工艺兼容性等领域的最新进展。
We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.
在引入电镀铜工艺的同时我们也不得不面对一些铜线工艺所特有的缺陷，如铜线和低K值介电质可靠性问题，以及电镀铜后产生的孔洞缺陷等问题。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
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