The point type PN junction photodiodes of silicon are fabricated, and the photoelectric parameters of photodiode are measured.
用N型硅单晶材料制作了点状PN结光电二极管，对二极管的光电参数进行了测量。
A double-junction structure of photodiode is proposed.
本文提出了一种重结光电二极管结构。
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
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