PN-junction is the basic element of electron system and the interference of electromagnetic radiation will affect on PN junction finally.
PN结是电子系统的构成基础，电磁辐射干扰将最终作用到PN结上。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
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