The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
In the 1960s, the use of science and technology workers semiconductor PN junction of the principle of developing a LED Lighting -emitting diodes.
上个世纪60年代，科技工作者利用半导体p N结发光的原理，研制成了LED发光二极管。
Hitachi, Lucas, and other "chip" diodes are prone to fracture at the junction of the stem to the case of the chip.
日立，路克斯和其他“芯片”二极管主干与芯片盒的接缝容易开裂。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
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