There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
Calculation of punch through limited breakdown voltage for parallel plane junction has been examined in this paper.
本文研究平行平面穿通结击穿电压的计算。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
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