Moreover, lines with micro-width are also fabricated on ITO film.
在ITO膜上加工出了微米宽度的直线。
Photoelectric properties and investigation focus of ITO film are emphasized.
重点讨论了ITO膜的光电性能和当前的研究焦点。
The low resistance and low pressure stress ITO film for color filter is investigated.
探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。
Effect of bulk bias voltage and oxygen partial pressure on optical spectrum of ITO film is studied.
研究了基体偏压和氧分压强影响ito膜光谱的机理。
The experimental results showed that it is absolutely feasible to fabricate ITO film on the quartz matrix by sol-gel techni.
结果表明，采用溶胶-凝胶旋涂法制备的ITO薄膜是由立方相纳米颗粒构成，随涂层增加，薄膜表面变得平滑。
The another is that ITO film must be well grounded, or else the surface charge and discharge phenomena of OSR would be much more serious.
同时必须保证ITO薄膜接地效果良好，否则会使OSR表面充放电现象更加严重。
They are the desirable instruments for the manufactories of the conducting film (ITO film) and the devices (liquid crystal indicator etc).
该系列测试仪是导电薄膜（ITO膜等）制造厂家和器件（液晶显示器等）制造厂家的理想仪器。
Such an ITO film with enhanced ultraviolet (UV) transmittance has become an alternative candidate for applications in current UV photonic devices.
此拥有紫外光穿透率提升的氧化铟锡薄膜在目前紫外光光电组件的应用上是绝佳的选择之一。
The results showed that surface square resistance and earthing way should be designed in reason when ITO film used for antistatic discharge on OSR surface.
结果表明，ITO薄膜应用于OSR表面防静电放电时，需合理设计表面方阻和接地方式。
High quality ITO transparent conductive film was prepared by reactive low voltage ion plating technique, which is different to the most common sputtering method to deposit ITO film.
溅射镀膜方法是制备ito透明导电膜最常用也是实验研究最多的方法。
Several methods of the preparation of ITO thin film with sol-gel technique were introduced. The ITO thin films were gotten by the inorganic method.
介绍了几种用溶胶凝胶法制备ito薄膜的工艺方法，用其中一种无机的方法成功制备了ITO透明导电膜。
The design principles of indium tin oxide film (ITO) applied to antistatic for optical solar reflector (OSR) have been studied.
对氧化铟锡(ito)薄膜在光学太阳反射镜(osr)抗静电放电设计中的应用进行了研究。
A tin doped indium trioxide conducting electrode coated with mercury film (Hg ITO) was obtained and an optically transparent thin layer electrochemical cell with Hg ITO as electrodes was designed.
报道了汞膜修饰掺锡三氧化二铟导电玻璃电极的制备及其薄层电化学池的设计，测试了电极和薄层池的光、电化学性能。
The results demonstrate that dynamic e-beam evaporation technology is an effective method for preparing excellent ITO transparent conducting film.
实验结果和理论分析表明，动态变化的电子束蒸发工艺是制备优质ito透明导电膜的有效方法。
The properties of abrasion resistance and thermal insulation of the waterborne polyurethane film were improved by the addition of nano-Al2O3 and nano-ITO respectively.
分别将纳米氧化铝和纳米氧化铟锡加入到水性聚氨酯树脂中，改善了水性聚氨酯涂膜的耐磨性能和隔热性能。
It is found that ITO surface roughness decreased after oxygen plasma treatment, which can improve its wetting performance and consequently improve the film performance.
经氧等离子体处理后，ITO薄膜的表面粗糙度减小，平整度提高，提高了ITO薄膜表面的润湿性能，改善了有机物在其表面的成膜性能。
A transparent conductive ITO anti-reflection layer is generated on a top layer of the amorphous silicon thin film sub-battery.
在非 晶硅薄膜子电池的顶层上生成有透明导电的ITO防反射层。
Several methods of the preparation of ITO thin film with sol-gel technique were introduced.
介绍了几种用溶胶凝胶法制备ito薄膜的工艺方法，用其中一种无机的方法成功制备了ITO透明导电膜。
Several methods of the preparation of ITO thin film with sol-gel technique were introduced.
介绍了几种用溶胶凝胶法制备ito薄膜的工艺方法，用其中一种无机的方法成功制备了ITO透明导电膜。
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