The invention improves puncture voltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.
本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。
The invention improves puncture voltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.
本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。
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