When the external RF frequency is much bigger than ion plasma frequency, ions answer average field.
当外加射频频率远大于离子等离子体频率，离子响应平均场，离子的密度分布几乎不随时间变化；
It has been shown that when the RF frequency is less than the ion plasma frequency, the ion flux density will strongly depend on the time.
结果表明，当射频场的频率小于或等于离子等离子体频率时，离子流密度明显地随时间变化。
Experimental study of the influence of plasma shielding on ion extraction time.
等离子体屏蔽效应对离子取出时间影响的实验研究。
This phenomenon above may be explained through analyzing the movement of electron and positive ion in plasma canal.
通过参考和分析等离子通道中电子和正离子的运动，并对上述现象给出了探讨性的解释。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
The RF method shortens the ion extraction time, and increases the ion extraction efficiency. It can also control the plasma density by changing the magnetic field.
共振法缩短了离子引出时间，提高了离子引出效率，并且可以通过对外加磁场的调节来控制等离子体密度。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
Measurement of plasma ion temperature and rotation velocity.
等离子体离子温度和角向速度测量。
The ion energy distribution in the plasma exhaust plume of a hall thruster is important to evaluate the influence of the hall thruster plume and optimize the thruster position on the spacecraft.
霍尔推力器羽流中的离子能量分布情况对于评估推力器羽流影响，优化推力器在航天器上的布局具有重要意义。
The effect of plasma density on the ion energy flux is analyzed.
分析了等离子体浓度对离子能量通量的影响。
At both sides as the ion charge number is increased, the conductivity in LHW driven plasma decreases, but the ratio of this conductivity and the Spitzer-Harm conductivity increases.
但是不论在外侧或内侧，随着离子电荷数增大，波驱动的等离子体电导率降低，而它与斯必泽-亥姆电导率之比却增大。
The relationship between the ion energy flux colliding on the material surface and the plasma density is investigated.
研究了射频鞘层中离子轰击材料表面的能量通量与等离子体浓度之间的关系。
The effect of the plasma temperature on the ion concentration is also discussed.
文章还讨论了等离子体的温度对离子密度的影响。
A theoretic model for prediction of sample temperature during plasma based ion implantation was established, and computer simulation was done with the model.
建立了等离子体基离子注入过程中试样温度预测的理论模型，应用这个模型进行了一系列数学模拟。
The result of measured plasma ion density in a device simulating plasma is represented.
文中给出了模拟装置的等离子体的离子密度测量结果。
Analyzing the energy spectra of ion beams emitted from neon Z-pinch plasma with a compact Thomson spectrometer.
使用紧凑式汤姆生离子谱仪测量Z箍缩氖气等离子体的辐射离子束能谱。
Mssbauer measurements have been carried out for pure iron powder samples, the whose surface was implanted with nitrogen ions by plasma source ion implantation techniques.
采用等离子体源离子注入方法，将氮离子注入纯铁粉中，对样品进行穆斯堡尔谱研究。
Surface of high performance polyethylene fibers have been treated with corona, chemical, high-energy ion and plasma.
采用化学法、电晕法、高能离子法和等离子体法对高性能聚乙烯纤维进行表面处理。
The mass concentration, water-soluble ions and elemental composition of fine particles were detected by the weighing method, ion chromatography, inductively coupled plasma chromatography separately.
用称重法、离子色谱法和电感耦合等离子质谱法分别测得细颗粒物的质量浓度、水溶性离子和元素组成。
In this paper, a glow discharge plasma source ion implantation technique is described.
本文叙述了辉光放电等离子体源的等离子体源离子注入。
Helium ion was implanted by plasma immersion ion implantation technology.
氦离子用等离子体浸没离子注入技术注入硅片中。
Titanium nitride(TiN) hard protective films were fabricated on AISI52100 bearing steel surface employing plasma immersion ion implantation and deposition(PIIID) technique.
用等离子体浸没离子注入与沉积（PIIID）复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。
Considering the disturbance of the plasma electrons at the beam-ion channel boundary, the eigen-equation of TM mode has been derived.
考虑束-离子通道边界上等离子体电子可能发生的扰动，导出了TM模本征方程的理论式。
An ion energy auto analyzer was designed and implemented for the rapid measurement of plasma ion energy distribution.
为了快速获得等离子体离子能量的分布规律，研制了一套等离子体离子能量自动分析器。
The technology of plasma ion assisted depositing narrow-band pass filters is studied.
研究了采用等离子辅助技术制备窄带滤光片的工艺。
The characteristic of spatial distribution of plasma ion density in reaction chamber were diagnosed by a Langmuir double probe, and the effect of Ar pressure and RF power were also investigated.
利用朗缪尔静电双探针诊断了蒸发镀膜装置反应室内等离子体密度及分析其分布规律，并分析了气压和功率对等离子体分布的影响。
The electron temperature and plasma potential show the same tendencies with respect to the ion density.
电子温度、等离子体空间电位变化与等离子体密度呈相同趋势。
The operation theory of violet lasing in krypton ion laser and the construction design of the plasma tube are discussed.
本文讨论了氪离子激光器中紫色激光作用的工作原理，放电管的结构设计。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
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