Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。
The ion barrier film at the input of the microchannel plate (MCP) plays an important role in improving the lifetime of the third generation image tube.
微通道板离子阻挡膜在第三代微光像增强器中起着重要作用，本文在分析离子阻挡膜形成原理的基础上，给出了实验方案。
The dielectric barrier surface discharge process is simulated using Poisson's equation and drift-diffusion equation and the distribution history of electron, ion and electric field is gained.
采用泊松方程和漂移-扩散方程对介质阻隔面放电进行数值模拟，得到了电子、离子以及电场分布随时间的变化。
The Barrier Penetration Model has been used to calculate the heavy ion fusion cross section and it does give a good description of the experimental data in existence.
本文利用势垒穿透模型计算重离子融合反应截面，我们发现理论计算结果同现有的实验数据符合得相当好。
The light ion implanted waveguide has been demonstrated to be a typical barrier-confined waveguide.
轻离子注入形成典型的光学位垒型光波导。
In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures.
在一个方面，在制备HEMT时可以利用选择性的氟离子注入来产生增强背势垒的结构。
In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures.
在一个方面，在制备HEMT时可以利用选择性的氟离子注入来产生增强背势垒的结构。
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