The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
Oxide ion yield of the rare earth elements (REE) decreased with the increasing of RF power and the sampling depth, or with the decreasing of carrier gas flow rate.
稀土元素的氧化物离子产率随入射功率和采样深度增加，载气流速减小而降低。
The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well as total or partial pressure analysis.
该控制器根据存在于该离子束内的污染物、或是不存在该污染物的情形、以及总压或分压分析来选择与调整该气体的组成以及流速。
The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well as total or partial pressure analysis.
该控制器根据存在于该离子束内的污染物、或是不存在该污染物的情形、以及总压或分压分析来选择与调整该气体的组成以及流速。
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