This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上,设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
In chapter 5, the on-screen driving circuits composed of P-channel TFT have been designed, including inverter, shift register, transmission gate and simulated using simulation software.
第五章设计了全p沟道tft构成的屏上驱动电路,包括反相器、移位寄存器、传输门的设计,并用仿真软件进行了仿真验证。
A combinational structure of the transmission gate in the inverter control with different threshold voltages is presented.
提出了一种不同阈值电压反相器控制的传输门组合结构。
Then the all basic-circuits are also designed and simulated carefully including active resister, current mirrors, comparator, inverter, AND gate, OR gate.
其次对集成电路内所需要的基本模拟及数字电路如有源电阻、电流镜、电压比较器、与门及或门进行了设计和仿真。
The high speed built-in HVIC provides optocoupler-less IGBT gate driving capability that further reduce the overall size of the inverter system design.
高速内置HVIC提供光耦合器的IGBT栅极驱动能力,进一步降低了逆变器系统设计的总体尺寸。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
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