Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
Metallization is the process of depositing a thin film of metal and patterning it to form the desired interconnection arrangement.
金属化是淀积一层薄薄的金属膜的工艺，将其制成模版用于形成所需的内部互连排列。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
This paper mainly studies the reliability of substrates of MCM-C including thick-film resistors, metal lines and vias for interconnection.
本研究重点研究了MCM—C基板的可靠性，包括厚膜电阻，基板布线以及互连通孔。
This paper mainly studies the reliability of substrates of MCM-C including thick-film resistors, metal lines and vias for interconnection.
本研究重点研究了MCM—C基板的可靠性，包括厚膜电阻，基板布线以及互连通孔。
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