Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管(IGBT)作为一种可控开关,获得了广泛应用。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT(绝缘栅双极型晶体管)器件,PWM(脉宽调制)控制技术。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本发明提供一种绝缘栅双极晶体管(IGBT),所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术,以及它们的应用。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
本系列产品使用32针微处理器和绝缘栅双极型晶体管,具有电动机运行不发出噪声、高效、低速等性能特点。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上,设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。
The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd generation IGBT.
探讨了IGBT功率电路尖峰电压产生的原因,并针对第三代IGBT,给出了适应不同功率的吸收电路。
Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.
针对阳极控制电源的输出脉冲宽度变化大的特点,采用串联固态开关控制阳极电压。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步,成为更好和更便宜。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
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