An InSb infrared focal plane array (IRFPA) detector is required to operate in the temperature range from room temperature to 77k for several thousand times in its lifetime period.
锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次。
The changes of volume, band structures, electronic density of states and charge density contour plots for lithium intercalation in InSb are also discussed.
讨论了锂嵌入时的体积变化、能带结构、电子态密度以及电荷分布等性质。
The damage morphology of InSb is proved to be ablation, but no cleavage burst appears. It is in accordance with practice.
研究发现其破坏形态为熔融破坏，一般不会出现解理或炸裂现象，这一结果与相关实验报道一致。
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals.
为了获得高质量的晶体，需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals.
为了获得高质量的晶体，需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。
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