This paper presents a hardware structure-independent weight-based fault injection model for accurate emulation of the radioresistance in the SRAM-based FPGA.
提出一种与具体硬件结构无关、基于权重的错误注入模型，用于准确模拟基于SRAM的现场可编程门阵列抗辐射性能。
Based on power injection model, detail analysis is made on the influence of FACTS control to the optimal equations of power system.
基于功率注入模型，详细分析了FACTS控制的引入对系统优化方程的影响。
Based on power injection model, detail analysis is made on the influence of FACTS control to the optimal equations of power system.
基于功率注入模型，详细分析了FACTS控制的引入对系统优化方程的影响。
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