The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
CONTACT RESISTANCE: 50 milliohms initial Max.
接触电阻：50毫初步最大。
CONTACT RESISTANCE: 50 milliohms initial Max.
接触电阻：50毫初步最大。
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