The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
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