A new many-valley effective mass impurity state theory is presented.
本文提出了一种新的多能谷有效质量杂质电子态理论。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
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