A new many-valley effective mass impurity state theory is presented.
本文提出了一种新的多能谷有效质量杂质电子态理论。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap.
证明在磁性杂质附近，可能形成一个束缚态的元激发，其能量位于能隙之中。
Our results are as follows:(1) The Feymann rules are obtained for the effects of nonmagnetic impurity scattering in theDDW state.
得到的主要结果有两个：（1）在研究非磁性杂质散射效应时，建立了关于非磁性杂质散射的费曼图规则。
The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
The QOS should state how the proposed impurity limits are qualified.
QOS应注明拟定的杂质限度是如何限定的。
Simulation results show that the total amount of impurity in the buffer layer or transparent an - ode is the key to determine the on-state voltage drop of GCT device.
模拟结果表明，缓冲层与透明阳极各自区域中的杂质总量是决定GCT的通态压降的关键因素。
The crystal has two different impurity layers, and in the acute angle direction of the high transmission expected, their detect state has the same frequency;
该晶体具有两个不同杂质层，在希望高透的锐角方向，它们的缺陷态具有相同的频率；
The crystal has two different impurity layers, and in the acute angle direction of the high transmission expected, their detect state has the same frequency;
该晶体具有两个不同杂质层，在希望高透的锐角方向，它们的缺陷态具有相同的频率；
应用推荐