Procedures should provide for comparing the impurity profile of each reworked batch against batches manufactured by the established process.
应当有程序对每一重新加工过批号与用规定工艺生产的批号进行杂质情况的比较。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
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